Ultra-low thermal conductivities in large- area SiGe nanomeshes for thermoelectric applications

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Descripción: In this work, we measure the thermal and thermoelectric properties of large-area Si 0.8 Ge 0.2 nano-meshed films fabricated by DC sputtering of Si 0.8 Ge 0.2 on highly ordered porous alumina matrices. The Si 0.8 Ge 0.2 film replicated the porous alumina structure resulting in nano-meshed films. Very good control of the nanomesh geometrical features (pore diameter, pitch, neck) was achieved through the alumina template, with pore diameters ranging from 294±5nm down to 31±4 nm.
Citación recomendada (normas APA)
: Jaime Andrés; Muñoz Rojo Pérez Taborda, "Ultra-low thermal conductivities in large- area SiGe nanomeshes for thermoelectric applications", -:Scientific Reports; Vol. 6, Número de artículo 32778, 2016. Consultado en línea en la Biblioteca Digital de Bogotá (https://www.bibliotecadigitaldebogota.gov.co/resources/2084719/), el día 2025-05-10.

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