Low thermal conductivity and improved thermoelectric performance of nanocrystalline silicon germanium films by sputtering

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Descripción: Si x Ge 1? x alloys are well-known thermoelectric materials with a high figure of merit at high temperatures. In this work, metal-induced crystallization (MIC) has been used to grow Si 0.8 Ge 0.2 films that present improved thermoelectric performance (zT= 5.6× 10? 4 at room temperature)—according to previously reported values on films—with a relatively large power factor (? centerdot S 2= 16 ?W centerdot m? 1 centerdot K? 2). More importantly, a reduction in the thermal conductivity at room temperature (?= 1.13±0.12 W.
Citación recomendada (normas APA)
: Jaime Andrés; Romero Pérez Taborda, "Low thermal conductivity and improved thermoelectric performance of nanocrystalline silicon germanium films by sputtering", -:Nanotechnology 27, 2016. Consultado en línea en la Biblioteca Digital de Bogotá (https://www.bibliotecadigitaldebogota.gov.co/resources/2087669/), el día 2025-05-19.

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