AlN film deposition as a semiconductor device

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Descripción: AlN films were deposited by pulsed laser deposition (PLD) using an Nd: YAG laser (?= 1064 nm). The films were deposited in a nitrogen atmosphere as working gas; the cathode was an aluminium high purity (99.99%) target. The films were deposited using 7 J/cm2 laser fluence for 10 minutes on silicon (100) substrates. The working pressure was 9x10-3 mbar and the substrate temperature was varied from 200 C to 630 C. The thickness measured by profilometer was 150 nm for all films. Moreover, surface acoustic wave (SAW).
Citación recomendada (normas APA)
: Jaime Andrés; Aperador Pérez Taborda, "AlN film deposition as a semiconductor device", -:Ingeniería e Investigación; Vol. 33, No. 2, 2013. Consultado en línea en la Biblioteca Digital de Bogotá (https://www.bibliotecadigitaldebogota.gov.co/resources/2087629/), el día 2025-05-18.

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