Correlation between optical, morphological and compositional properties of Aluminum Nitride thin films by Pulsed Laser Deposition

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Descripción: AlN thin films were grown in a N2 atmosphere onto a Si/Si3N4 substrate by pulsed laser ablation. We have varied the substrate temperature for the thin film growth, using X-ray Reflectometry (XRR) analysis, we have characterized the thickness and density of the thin layer and the interface roughness from the X-ray reflectivity profiles. Experimental data showed that the root-mean-square roughness was in the range of 0.3 nm. X-ray photoelectron spectroscopy (XPS) was employed to characterize the chemical.
Citación recomendada (normas APA)
: Jaime Andrés; Vera Londoño Pérez Taborda, "Correlation between optical, morphological and compositional properties of Aluminum Nitride thin films by Pulsed Laser Deposition", -:IEEE Sensors Journal; Vol. 16, No. 2, 2016. Consultado en línea en la Biblioteca Digital de Bogotá (https://www.bibliotecadigitaldebogota.gov.co/resources/2087612/), el día 2025-05-17.

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